Dissertação de Mestrado #710 – Gabriel Rodrigues Fontenele – 10/10/2023

Surface, structural and electronic response of Indium Selenide

Autor: Gabriel Rodrigues Fontenele

Banca Examinadora

Prof. Rogério Magalhães Paniago (Orientador)

DF/UFMG

Prof. Angelo Malachias de Souza (coorientador)

DF/UFMG

Prof. Mario Sergio de Carvalho Mazzoni

DF/UFMG

Prof. Myriano Henriques de Oliveira Junior

DF/UFMG

Prof. Edmar Avellar Soares (Suplente)

DF/UFMG

Orientação

Prof. Rogério Magalhães Paniago (Orientador)

DF/UFMG

Prof. Angelo Malachias de Souza (coorientador)

DF/UFMG

Resumo do Trabalho

The investigation of layered materials has gained significant attention since the isolation and characterization of graphene. Their unique electronic, thermal and optical properties make them suitable for a diverse range of applications. Among these materials, indium selenide (In2Se3) has emerged as a promising candidate for different applications, due to its in-plane and out-of-plane ferroelectricity, high-order topological properties, layer-dependence bandgaps and high carrier mobility. In this work, we present a theoretical and experimental investigation of the β(3R)-In2Se3 phase, encompassing chemical, structural and electronic response analysis. We combined chemical analysis, including Energy Dispersive X-ray Spectroscopy and X-ray Photoemission Spectroscopy, with structural characterization via X-ray Powder Diffraction, Crystal Truncation Rods scattering and Electron Backscattered Diffraction. Additionally, we examined the electronic response of this phase combining Density Functional Theory (DFT)calculations with experimental results of Scanning Tunneling Spectroscopy (STS). We find that STS results, when compared with DFT calculation, are able to capture almost completely the local electronic response of β(3R)-In2Se3.

Tópico: Defesa de Dissertação – Gabriel Rodrigues Fontenele
Horário: 10 out. 2023 03:00 da tarde São Paulo

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