Dissertação de Mestrado #710 – Gabriel Rodrigues Fontenele – 10/10/2023
Surface, structural and electronic response of Indium Selenide
Autor: Gabriel Rodrigues Fontenele
Banca Examinadora
Prof. Rogério Magalhães Paniago (Orientador)
DF/UFMG
Prof. Angelo Malachias de Souza (coorientador)
DF/UFMG
Prof. Mario Sergio de Carvalho Mazzoni
DF/UFMG
Prof. Myriano Henriques de Oliveira Junior
DF/UFMG
Prof. Edmar Avellar Soares (Suplente)
DF/UFMG
Orientação
Prof. Rogério Magalhães Paniago (Orientador)
DF/UFMG
Prof. Angelo Malachias de Souza (coorientador)
DF/UFMG
Resumo do Trabalho
The investigation of layered materials has gained significant attention since the isolation and characterization of graphene. Their unique electronic, thermal and optical properties make them suitable for a diverse range of applications. Among these materials, indium selenide (In2Se3) has emerged as a promising candidate for different applications, due to its in-plane and out-of-plane ferroelectricity, high-order topological properties, layer-dependence bandgaps and high carrier mobility. In this work, we present a theoretical and experimental investigation of the β(3R)-In2Se3 phase, encompassing chemical, structural and electronic response analysis. We combined chemical analysis, including Energy Dispersive X-ray Spectroscopy and X-ray Photoemission Spectroscopy, with structural characterization via X-ray Powder Diffraction, Crystal Truncation Rods scattering and Electron Backscattered Diffraction. Additionally, we examined the electronic response of this phase combining Density Functional Theory (DFT)calculations with experimental results of Scanning Tunneling Spectroscopy (STS). We find that STS results, when compared with DFT calculation, are able to capture almost completely the local electronic response of β(3R)-In2Se3.
Tópico: Defesa de Dissertação – Gabriel Rodrigues Fontenele
Horário: 10 out. 2023 03:00 da tarde São Paulo
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